elektronische bauelemente smg2334ne 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mosfet 10-jan-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v t a =25c 3.5 continuous drain current 1 t a =70c i d 2.8 a pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 1.9 a t a =25c 1.3 power dissipation 1 t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance rating t Q 10 sec 100 maximum junction to ambient 1 steady-state r ja 166 c / w notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
elektronische bauelemente smg2334ne 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mosfet 10-jan-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 10 na v ds =0, v gs = 12v - - 1 v ds =16v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =16v, v gs =0, t j =55c on-state drain current 1 i d(on) 7 - - a v ds =5v, v gs =4.5v - - 58 v gs =4.5v, i d =2.8a drain-source on-resistance 1 r ds(on) - - 82 m ? v gs =2.5v, i d =2.4a forward transconductance 1 g fs - 10 - s v ds =10v, , i d =2.8a diode forward voltage v sd - 0.69 - v i s =1a, v gs =0 dynamic 2 input capacitance c iss 413 output capacitance c oss 76 reverse transfer capacitance c rss 67 pf v ds =15 v, v gs =0, f=1 mhz total gate charge q g - 6 - gate-source charge q gs - 0.9 - gate-drain charge q gd - 1.9 - nc i d =2.8a v ds =10v v gs =4.5v turn-on delay time td (on) - 8 - rise time t r - 21 - turn-off delay time td (off) - 49 - fall time t f - 26 - ns i d =2.8a, v ds =10v v gen =4.5v r l =3.6 ? , r gen =6 ? notes 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente smg2334ne 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mosfet 10-jan-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente smg2334ne 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mosfet 10-jan-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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